Abstract
This paper describes the application of proton and α-backscattering spectrometry for the determination of atomic ratio of Si to N in 1100–5000 Å silicon nitride films on Si and GaAs. The conventional α-Rutherford backscattering spectrometry is suitable for the analysis of films on Si; it is rather inadequate for films on GaAs due to higher background from the substrate. It is shown that these films can be analysed by 14N(α,α)14N scattering with 3.5 MeV α-particles. Proton elastic scattering with enhanced cross sections for 28Si(p,p)28Si and 14N(p,p)14N scatterings, is also suitable for analysing films on GaAs. However, the analysis of films on Si by this technique is difficult due to interferences between the signals of Si from the film and the substrate. In addition, the hydrogen content in films is determined by 1H(19F,αγ)16O nuclear reaction analysis using the resonance at 6.4 MeV. The combination of backscattering spectrometry with nuclear reaction analysis provides compositional analysis of ternary Si1−(x+y)NxHy films.
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