Abstract
Data are presented on the interface abruptness of a selectively wet-oxidized AlAs/GaAs multilayer using transmission electron microscopy (TEM) and energy-dispersive X-ray microanalysis (micro-EDX). It has been found by TEM study that the oxidized region was amorphous and well confined in the original AlAs layer and that there were transition regions on the oxide side of the interface. The compositional abruptness of the interfaces verified by micro-EDX revealed that structural abruptness (amorphous/crystal) is determined by the oxide profile and the transition regions found by TEM were thought to be a region where the components of the semiconductor materials in both sides of the interface intermixed.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
