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Abstract
In this work we investigate the indium content in In1−xGaxAs narrow trenches on Si by transmission electron microscopy (TEM), energy dispersive spectroscopy (EDS) and nano beam diffraction (NBD). We find a higher indium content in wider trenches and by scanning a trench from bottom to top we observe an increase of indium up to a maximum value close to the level of the surface of the shallow trench isolation oxide.
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