Abstract
We have studied the composition profiles of Stranski–Krastanov InAs/GaAs quantum dots grown on patterned nanohole arrays. Two dimensional surface chemical maps obtained by X-ray photoemission electron microscopy reveal a non-uniform composition profile similar to that of standard dots grown on planar surfaces, with an enhanced In concentration at the center of the islands, with respect to the wetting layer. A statistical analysis, however, revealed an improvement of about 50% of dot composition uniformity associated with the already reported enhancement of size uniformity. No significant size or composition variation was found by changing the period of the hole pattern from 250 to 600nm.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
