Abstract
Transmittance on TlGaxIn1-xS2 mixed crystals (0 ≤ x ≤ 1) was carried out in the 2.35–2.75 eV photon energy range at T = 10 K. Band gap energies of crystals were obtained utilizing the derivative spectra of transmittance and photon energy dependence of absorption coefficient. The dependence of direct band gap energy on composition at T = 10 K revealed that as gallium composition is elevated in the mixed crystals, the direct band gap energy increases from 2.56 to 2.67 eV.Photoluminescence spectra of TlGaxIn1-xS2 crystals were studied in the photon energy region of 2.30–2.95 eV at T = 10 K. The observed bands were attributed to transitions of electrons from shallow donor levels to valence band. The shift of PL bands to higher energies with increasing gallium content was revealed. Furthermore, composition ratio of crystals was determined from energy dispersive spectroscopy experiments.
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