Abstract
We have studied the structure, relative dielectric permittivity (ɛ), and dielectric loss tangent (tanδ) of SiC-AlN ceramic materials. The results demonstrate that both ɛ and tanδ are anomalously high in the composition range 30–50 wt % AlN at low frequencies (0.1 kHz). We show that the increase in ɛ may be due to a barrier effect on silicon carbide and aluminum nitride grain boundaries and to migration polarization.
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