Abstract
Abstract Amorphous Fe-Si thin films showing interesting semiconductor properties can be formed over a large composition range near β-FeSi2. In the present study, amorphous Fe100-xSix (x = 30.3 – 100) films were prepared by radio frequency magnetron co-sputtering, for the objective of clarifying the semiconducting composition range. The results on optical band gap, electrical resistivity, initial crystallization temperature, and devitrification phases all pointed to three distinct composition zones where the semiconducting behavior vary substantially, i.e., non-semiconducting 30.3 ≤ x ≤ 50, β-FeSi2-like direct bandgap 50
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