Abstract
We report here on the synthesis of large crystals of Si-containing carbon nitride, consisting of a predominantly C–N network, by microwave CVD. The Si content in this material varies from crystal to crystal and also with the deposition conditions and has been observed to be as low as less than 5 at.% in some crystals, wherein the Si atoms are believed to substitute for some of the C sites only. This is the first time that such large and well-faceted crystals consisting almost entirely of carbon-nitride network have been synthesized. Moreover, there is no obvious deposition of amorphous CN material.
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