Abstract

The present experiments demonstrate the selective epitaxial growth (SEG) of GalnP by low-pressure metalorganic chemical vapor deposition (LP-MOCVD) using ethyldimethylindium (EDMI), trimethylindium (TMI), trimethylgaflium (TMG) and triethylgallium (TEG) as group III sources. Completely selective epitaxy using TEGa+EDMIn can be achieved at growth temperature of 675/spl deg/C and at growth pressure of 40 Torr, while other combinations (TEG+TNU, TMG+TMI, and TMG+EDMI) can achieve SEG of GaInP at 650/spl deg/C. In epitaxial growth of GaInP, the Ga incorporation efficiency using TEG+EDMI is found to be lower than those using other combinations.

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