Abstract
We report on a new method for measuring the content of fully-strained InxGa1-xAsyP1-y/InP layer by analyzing the temperature dependent Omega-2Theta curves measured by X-ray diffraction (XRD). Applying the linear elasticity theory, the content parameters in the quaternary material can be obtained with high precision from a series of multiple XRD data points. For example, in the test sample grown by molecular beam epitaxy, the InxGa1-xAsyP1-y contents were measured as x = 0.881 ± 0.007, y = 0.308 ± 0.016, which agree with that obtained by the conventional method using XRD and photoluminescence techniques. In principle, the new method can provide higher precision than the conventional method since only high precision XRD data are used.
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