Abstract
Fluoridic films produced by the anodization of surfaces in nonaqueous solutions were characterized by Auger electron spectroscopy, x‐ray photoelectron spectroscopy, and electron microprobe analysis. The films consist of three distinct regions. A thick uniform region, containing the fluorides of cadmium, mercury, and tellurium, and, is covered by a thin layer. The third region—the film‐substrate interface—poor in mercury, consists mainly of and . Using ultra‐thin Pd marker layers and growth from baths saturated in it is shown that these anodic films are grown by two mechanisms: the dominant one occurs by motion of the film‐substrate interface into the semiconductor, consuming the original surface. There is, however, some growth at the film‐electrolyte interface which forms the thin layer on top of the structure. This second mechanism has a crucial effect on the stability of the film against oxidation. The rich region acts as a diffusion barrier for the in‐diffusion of oxidizing species. Tellurium ions, on the other hand, diffuse to the outer surface to be oxidized there.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
