Abstract
A metal-free three component cyclization reaction with amidation is devised for direct synthesis of DFT-designed amido-phenazine derivative bearing noncovalent gluing interactions to fabricate organic nanomaterials. Composition-dependent organic nanoelectronics for nonvolatile memory devices are discovered using mixed phenazine-stearic acid (SA) nanomaterials. We discovered simultaneous two different types of nonmagnetic and non-moisture sensitive switching resistance properties of fabricated devices utilizing mixed organic nanomaterials: (a) sample-1(8:SA = 1:3) is initially off, turning on at a threshold, but it does not turn off again with the application of any voltage, and (b) sample-2 (8:SA = 3:1) is initially off, turning on at a sharp threshold and off again by reversing the polarity. No negative differential resistance is observed in either type. These samples have different device implementations: sample-1 is attractive for write-once-read-many-times memory devices, such as novel non-editable database, archival memory, electronic voting, radio frequency identification, sample-2 is useful for resistive-switching random access memory application.
Highlights
The leading solid state memory technologies, dynamic random access memory (DRAM) and flash memory, suffer from major short comings that may challenge the rapid growth of high-speed, low-cost, and low-power computational systems
We have demonstrated for the first time that by varying the mixture ratio of newly designed and synthesized amido-phenazine and stearic acid (SA), both resistive-switching random access memory (RRAM) and WORM are achievable
An optically inert long chain fatty acid SA32 may be used as a stabilizing matrix compound to achieve a mixed component system for the development of a wider variety of properties compared to the material of pure phenazine and to determine the thermodynamic behavior of the constituent molecules for specific electronic applications
Summary
The behavior of composition-dependent innovative WORM and RRAM organic electronics of the cross bar device (Fig. 3a) may be explained by the different packing patterns in the nanoscale materials, which generated two completely different nanoelectronic devices for two useful memory applications. During the other half of this voltage sweep cycle, as the voltage polarity is made opposite, an opposite mechanism will occur, i.e., a condition will reach when no traps will remain filled and beyond that point the material switch back from high conductivity to low conductivity state It is to be noted that overall electronic sensitivity and characteristics of the fabricated devices are expected to be much different in comparison to the same for the individual nanobuilding blocks (8, I, 9)
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