Composition dependence of the Hall effect in amorphous TbxCo1−x thin films

Abstract

The Hall effect in amorphous TbxCo1−x thin films has been studied quantitatively with respect to Tb at. % in films. Amorphous TbxCo1−x thin films exhibit unusually large spontaneous Hall coefficients (Rs≈2×10−9 Ω cm/G, whose sign is strongly dependent on the film composition as governed by the relation ρH=Rs4πMS. At Tb compositions below the compensation composition xcomp, the Hall resistivity ρH is positive and the sign is reversed for Tb compositions above xcomp. Even though the saturation magnetization at x>xcomp is lower than at x<xcomp, the absolute Hall resistivity |ρH| and Hall coefficient |Rs| are higher. As the Tb content increases in the films, the resistivity increases. In amorphous TbxCo1−x thin films, the Hall angle |ρH/ρ| is sensitive to the resistivity of the films. On the basis of electrical resistivities, Hall resistivities, and Hall angles in amorphous TbxCo1−x films, the side jump Δy of 0.16 to 0.26 Å was calculated.