Abstract
Composition dependence of the lattice constants and edge emissions of crystals of AgGa(S1-xSex)2 solid solution grown by the sintering method were examined in comparison with those grown by the iodine vapour transport method using sintered crystals as raw materials. Phase shift difference measurement of reflection showed a linear dependence of the band gap on composition, whereas a slight bowing characteristic was observed in composition dependence of edge emission. The shift of composition, x, during the iodine vapour transport growth and slight bowing of the edge emissions confirmed from these experiments are discussed.
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