Abstract
The antiferroelectric properties and energy storage performance of (Pb0.02,Y0.98)(Snx,Zr1−x)O3 (0 ≤ x ≤ 0.6) thin films fabricated by chemical solution deposition (CSD) were investigated. The recoverable energy storage density Ureco linearly decreased from 15.9 J/cm3 at x = 0 to 8.5 J/cm3 at x = 60 at. %. The energy storage efficiency η increased with increasing x up to 40 at. % and showed a maximum of 68.4% at x = 20 at. %. Time domain measurements of the charge response induced by an electric field pulse were performed to evaluate the energy performance of charging and discharging processes. The average discharging power density after applying E = 380 kV/cm was 4.4 kW/cm3 and the maximum discharging power density was evaluated to be 740 kW/cm3. The Sn-substituted (Pb,Y)(Snx,Zr)O3 thin films showed a well-defined antiferroelectric property and the 20 at. % Sn-substituted thin film exhibited great energy performance in this study.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
