Composition dependence of dielectric properties in Se100-xCux glassy alloys

Abstract

In this paper we report the composition dependent of dielectric properties in Se100-xCux (x = 0, 2, 4 and 6) glassy alloys. The temperature and frequency dependence of the dielectric constants and the dielectric losses in the above glassy systems in the frequency range (1k Hz-5 M Hz) and temperature range (300 K–350 K) have been measured. It has been found that dielectric constant and the dielectric loss both are highly dependent on frequency and temperature and also found to increase with increasing concentration of Cu in pure amorphous Se. The role of Cu, as an impurity in the pure a-Se glassy alloy, is also discussed in terms of electronegativity difference between the elements used in making the aforesaid glassy system. Apart from this, the results have been also correlated in terms of a dipolar model which considers the hopping of charge carriers over a potential barrier between charged defect states.