Abstract
Composition controllability of vertical InGaAs nanowires (NWs) on Si integrated by selective area growth was characterized for Si photonics in the optical telecommunication bands. The pitch of pre-patterned holes (NW sites) changed to an In/Ga alloy-composition in the solid phase during the NW growth. The In composition with a nanometer-scaled pitch differed completely from that with a μm-scaled pitch. Accordingly, the growth morphologies of InGaAs NWs show different behavior with respect to the In/Ga ratio.
Highlights
Composition controllability of InGaAs nanowire arrays in selective area growth with controlled pitches on Si platform
The electrical intra-connection and inter-connection of chips are facing technical limitations in terms of reliability following the miniaturization of Si complementary metal-oxide-semiconductor (Si CMOS) technologies
Optical interconnections using Si photonics,[1,2] in which various optical devices such as light sources, detectors, modulators, and waveguides are integrated on an Si platform, are being advanced as an alternative wiring technology.[3]
Summary
Composition controllability of InGaAs nanowire arrays in selective area growth with controlled pitches on Si platform.
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