Abstract
A new composition control method of molecular beam epitaxy is studied in AlxGa1-xAs using a pulsed molecular beam. The AlAs mole ratio in the ternary compound is controlled by changing the duty ratio of a pulsed aluminum molecular beam. The photoluminescence shows no particular difference between the films grown by the pulsed molecular beam and a conventional-continuous molecular beam. A composition control system is made and a new type of superlattice is fabricated.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
