Abstract

We investigated the compositional self-regulation and seeding effects of an Fe2O3 layer during the metalorganic chemical vapor deposition of epitaxial BiFeO3 thin films. The growth of the BiFeO3 films was explained in terms of the prior deposition of Fe2O3 and the subsequent incorporation of Bi2O3 into Fe2O3. The self-regulation of film composition was achieved by supplying excess Bi at high growth temperature. The introduction of an Fe2O3 seed layer as thin as 5 nm promoted homogeneous thin film growth and consequently reduced the leakage and its fluctuation as well as the compositional fluctuation. The seed layer also served to control the interfacial composition between BiFeO3 and SrRuO3.

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