Abstract
TiN thin films were fabricated on Si (100) substrates using Electron Cyclotron Resonance (ECR) microwave plasma technique. The composition, texture and microstructure of the as-deposited films had been investigated by use of X-ray Photoelectron Spectroscopy, X-ray Diffraction and Scanning Electron Microscopy. TiN compound with atomic ratio N/Ti near 1.2 and (111) preferential orientation was the basic phase, and impurities such as TiO 2, Ti 2O 3 and TiC existed in the films. The cross-sectional morphology of the films was columnar. The effects of the bombardment and the pre-treatment for the substrate surface by energetic ions on the properties of the films were also analyzed.
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