Abstract
The composition and structure of nanodimensional Ga1 – xNa x As phases produced by implantation of Na+ ions into the near-surface area of GaAs have been studied by Auger electron spectroscopy and fast electron diffraction. It has been found that the thickness of the ternary epitaxial layer is 10–12 nm for ion energy E0 = 20 keV. The composition of the three-layer nanosystems is GaAs–Ga0.5Na0.5As–GaAs.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have