Abstract
A SiO2/Si/CoSi2/Si(111) heterostructure is synthesized via successive Co+- and O 2 + -ion implantation into silicon followed by annealing. The optimal implantation and annealing conditions needed to obtain such a structure are determined. It is demonstrated that CoSi2 and SiО2 layers formed in the surface region are single- and polycrystalline, respectively.
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Schedule a callMore From: Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques
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