Abstract
We describe a quantitative correlation between lateral segregation of the composition field and local compressive stresses within low mismatch Si0.7Ge0.3∕Si(100) undulated epitaxial films. By controlled chemical wet etching, the Ge concentration in the film was determined to be 0.24±0.02 at undulation troughs and 0.36±0.02 at peaks. Analysis of the resultant local stress fields was investigated via the finite element method with anisotropic models. Without surface roughening, a 50nm planar Si0.7Ge0.3∕Si(100) epitaxial film would have 2.39GPa average compressive stress. After surface roughening, the average film stress is reduced to 2.33GPa if there is no composition variation within the undulated film. With composition segregation, the average stress within the undulated film further is reduced to 2.30GPa with locally redistributed stresses of 2.5GPa at troughs and 2.1GPa at peaks.
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