Composition and morphology of InP{100} surfaces as a function of low energy Ar + bombardment and annealing

Abstract

The surface composition and morphology of the InP{001} surface have been studied by in situ Auger electron spectroscopy (AES) and ex situ atomic force microscopy (AFM) as a function of Ar + ion bombardment energy over the range 5 eV to 500 eV and annealing temperatures up to 600°C. Ion bombardment has been performed by means of a low energy, mass-selected, ultrahigh vacuum ion beam system. The surface contamination can be removed by Ar + ion bombardment with ≥ 30 eV ion energies for carbon and ≥ 60 eV ion energies for oxygen species. However, Indium-rich clusters and islanding are observed for Ar + ion energies above ∼ 40 eV. The results show that a combination of 30 eV Ar + ion bombardment and annealing to ∼ 300°C can produce an InP{100} surface which is devoid of observable impurities in AES and devoid of defect features in AFM.