Abstract
Hydrogenated amorphous silicon-germanium (a-SiGe:H) alloys were prepared from a-Si:H (0.5 nm)/a-Ge:H(0.4–1.26 nm) multilayers at 200 °C by the r.f. glow discharge technique. The optical bandgap was controlled by changing the thickness of the a-Ge:H layers as well as the hydrogen dilution during its deposition. The configuration of bonded hydrogen was investigated by infrared absorption measurements of Si–H and Ge–H vibrational modes. The structure and photoconductivity of the prepared films were systematically investigated as functions of their optical gap. It is found that the optical and electrical properties of multilayer alloys are improved compared to a-SiGe:H films produced from a mixture of hydrides SiH4+GeH4, even when diluted with hydrogen. Films of optical gap 1.3≤E3.5≤1.5eV show high photosensitivity and low void fraction.
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