Abstract
Ternary AlxGa1−xN films with different Al compositions were synthesized on sapphire and Si substrates by pulsed laser co-ablation of a polycrystalline GaAs target and a metallic Al target in nitrogen plasma generated by electron cyclotron resonance discharge of N2 gas.
Highlights
Pulsed laser deposition (PLD) has been established as a versatile technique for preparing various thin films.[14,15] It is possible to reduce the growth temperature by means of this technique, since the average energy of the laser ablated species is considerably high
Ternary AlxGa1ÀxN films with different Al compositions were synthesized on sapphire and Si substrates by pulsed laser co-ablation of a polycrystalline GaAs target and a metallic Al target in nitrogen plasma generated by electron cyclotron resonance discharge of N2 gas
In the reactive environment of nitrogen plasma generated by electron cyclotron resonance (ECR) discharge and with the assistance of the nitrogen plasma, ternary AlxGa1ÀxN films were synthesized by the pulsed laser co-ablation of GaAs and Al targets and the variation of the Al composition was realized by varying the repetition rate of the pulsed laser beam ablating the Al target
Summary
Pulsed laser deposition (PLD) has been established as a versatile technique for preparing various thin films.[14,15] It is possible to reduce the growth temperature by means of this technique, since the average energy of the laser ablated species is considerably high. PLD can be combined with other techniques or assisted by other sources such as plasma and ion beams, forming PLD-based hybrid methods.[14] In particular, reactive plasmas composed of multiple reactive species are very effective to assist reactive synthesis of various materials in a broad range of composition, structure and dimensionality.[14,16,17] The epitaxial growth of GaN films has been achieved by laser ablation of the Ga target in a radio-frequency plasma ambient.[18] The same group reported the growth of high quality AlN films by PLD assisted with nitrogen plasma.[19]. The synthesis process was spectroscopically characterized by monitoring and analyzing the optical emission from the plasma formed during the synthesis of AlxGa1ÀxN and the mechanisms responsible for the preparation of AlxGa1ÀxN films were discussed
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