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Abstract
We report the composition analysis of single InAs and Si semiconductor nanowires using pulsed-laser atom probe tomography. The experimental conditions and sample geometries needed to realize 3-D composition mapping are described in detail. InAs mass spectra obtained using voltage pulses and laser pulses are compared, and are found to be superior for pulsed-laser evaporation. The ability to analyze intrinsic Si nanowires using pulsed laser evaporation is demonstrated. No peaks associated with the gold catalyst used were found in the InAs or the Si nanowire mass spectra.
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