Abstract
In a UHV deposition system, thin films of Co doped FeSi x were grown on Si (111) substrates by coevaporation of Co, Fe and Si from three separately controlled sources. Heavy-ion RBS (15 MeV 14N 4+) providing a sufficiently high mass resolution was applied to determine the Co Fe ratio. For a Co content of up to [Co] ([Co] + [Fe]) ≈0.3 a linear correlation was found between the relative Co evaporation rate and the concentration of Co in the films. The composition analysis was completed by standard RBS (1.4 MeV 4He +) for more reliable values of the mean Si/metal ratio due to the smaller influence of multiple scattering processes in the spectrum region relevant to Si. IR phonon spectra of the FeSi x :Co films show characteristic changes which correlate with the Co concentration measured by RBS.
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