Abstract
The methods and parameters used for characterizing the burnout response of bipolar semiconductor components are discussed. Examples of data are given which indicate some relative merits of using either pulse current, voltage, power, or energy for characterizing parts and a standard characterization approach based on the application of current square pulsing is tentatively suggested. Data are also presented which illustrate how component electrical parameters change as a function of stress level in the step stress testing method. The implications of these data are pointed out relative to specifying failure criteria when the step stress method is used.
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