Abstract
The continued exploration of novel synthetic memristive materials with multifunctional properties is critical for future synapse-emulating circuits and electronic devices in the field of next-generation neuromorphic computing applications. In this work, the silver nanowires (AgNWs)-Egg albumen composites have been integrated as a resistive switching layer in the Ag/AgNWs-Egg albumen/Ag planar structure and exhibits both unipolar (memory) switching and threshold switching functions. The device in unipolar switching regime demonstrates an ON/OFF ratio above 105, a low resistance state of about 1.2 KΩ and a high resistance state of about 120 MΩ. Finally, a mechanism in combination with the conductive filament theory and a tunnelling conduction mechanism is proposed to explain the resistive switching behavior. The devices are prepared by simple and low-cost techniques, which make such devices appealing for future electronic applications.
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