Abstract
The electrodeposition of CuInSe 2 is investigated to improve the stoichiometric properties of CuInSe 2 layers on indium tin oxide (ITO)-coated glass substrates and to develop one-step electrodeposition method for solar cell applications. XPS was utilized for the characterization of the surface properties of CuInSe 2 layers. The influence of the complexing agent, e.g. benzotriazole, bulk concentration of Cu and Se and deposition potentials on the stoichiometric properties, are discussed.
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