Abstract
We studied point defects generated by electron-irradiation of hydrogenated Si crystals at low temperatures from the measurement of optical absorption due to hydrogen bound to point defects. Specimens of high-purity, n-and p-type floating-zone grown Si crystals were doped with H by heating in H 2 gas at 1300°C followed by quenching. Then, they were irradiated with 6 MeV electrons at 270, 200 and 130 K. We measured their optical absorption spectra at 7 K with the use of an FT-IR spectrometer. The relative mobilities of various point defects were discussed from the relative intensities of 1838, 1987 and 2122 cm −1 peaks which are due to H 2*, IH 2 and VH 2, respectively, where V, I and H 2* denote a vacancy, a self-interstitial and H 2 in metastable state formed by a reaction between an H 2 and a Frenkel pair, respectively.
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