Abstract

Modeling the dispersion relation of semiconductors using a complex Sellmeier equation is reported for the first time. For this purpose, the refractive indices of GaAs and InAsBi were measured using spectroscopic ellipsometry. The complex Sellmeier coefficients were then obtained by a least-square fitting procedure. Simulation results demonstrate that complex Sellmeier equations can accurately model the refractive index dispersion of different semiconductors at wavelengths shorter than the band gap wavelengths, where the conventional Sellmeier equations are not applicable.

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