Abstract
Atomic ordering in AlGaN films produced by plasma assisted molecular beam epitaxy (PA-MBE) was investigated with X-ray diffraction (XRD) and transmission electron microscopy selected area diffraction (TEM-SAD). Under nitrogen-rich growth conditions, films undergo 1×1 monolayer cation ordering along the [0001] growth direction. This type of ordering is stronger in N-polar films than in Ga-polar films and is sensitive to the growth ratio of group-III to group-V flux. These observations are in qualitative agreement with the first principal calculations by Northrup and co-workers. Under group-III rich growth conditions of Ga-polar films, the XRD data is consistent with the quasi-random stacking of spontaneously formed 14-ML and 12-ML superlattice structures. Reciprocal space mapping shows a small tilt (0.25°) between the crystallographic c-axis of the wurtzite structure and the superlattice axis. This result can be explained by the presence of c-axis oriented superlattice domains with a parallel step translation between neighboring domains. This result is in qualitative agreement with a recently proposed model by Venezuela and co-workers of self-organized superlattice formation during step flow growth of strained alloys on vicinal surfaces.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
