Complex formation at indium donors in p-CdTe

Abstract

After diffusion of silver into p-CdTe at room temperature, two electric field gradients (EFG) are observed at 111In111Cd probe atoms at T = 77 K: νQ1 = 61 MHz, η1 = 0.15 and νQ2 = 30 MHz, η2 = 0.46. The assignment of EFG1 to In-A centers leads to the conclusion that the 0/− level of the Cd-vacancy is located deeper in the band gap than the shallow doping and that the two EFGs are caused by the neutral and singly negative Cd-vacancy. The reason for In-A center formation and subsequent dissociation (aging) after Ag diffusion is explained.