Abstract
An oscillatory instability of real-space transferred electrons in a modulation-doped heterostructure of GaAs/AlGaAs system has been computer-simulated, by using a model which describes thermionic emission and energy transfer between the heterolayers. In the static regime, the current-voltage characteristics show negative differential resistivity above 1.6 kV/cm. With an applied electric field above 2.8 kV/cm, spontaneous current oscillation and chaos have been demonstrated.
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