Abstract
ABSTRACTA study of the electronic states associated with divacancy defects and with the defect complexes involving an anion antisite with a group IV atom (Ac-IV) in GaAs and GaP is reported. The local densities of states have been determined using the large cluster recursion approach. The properties as well as the position of the gap states of the divacancy defect in GaAs are found to be consistent with the experimental results for the EL2 level. The change of the position of the defect levels of (Ac-IV) as a result of the change of bonding is analyzed. The effect of GaAs-A&As interface on the (Ac-IV) defect level is also examined.
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