Abstract
In recent years, there is a surge of research interest in exotic ferroelectric topological states, motivated by their rich emerging physical properties and potential applications in nanoelectronic devices. Here, we demonstrate the observation of a sort of complex center-type topological domain structures, which exhibit a quadrant center-type (with polarization pointing to the center) topological texture for an in-plane polarization component and a cylinder domain pattern along the vertical direction, in rhombohedral structured Pb(Zr0.7Ti0.3)O3 (R-PZT) nanoislands. Such a center domain state exhibits a rather high stability, which can well maintain its topological texture after heating to above curie temperature and subsequently cooling down to room temperature. Moreover, it allows erasure by a scanning electric field, yet it can also be recovered by a similar heating and cooling process. The observation of these unique topological textures in R-PZT nanoislands might provide a good playground for further exploring their topological phase transition properties, emerging novel functionalities, and application potential.
Highlights
There is a surge of research interest in exotic ferroelectric topological structures
We demonstrate the observation of a sort of complex center-type topological domain structures, which exhibit a quadrant center-type topological texture for an in-plane polarization component and a cylinder domain pattern along the vertical direction, in rhombohedral structured Pb(Zr0.7Ti0.3)O3 (R-PZT) nanoislands
We have observed well-ordered complex center domain arrays in R-PZT nanoislands fabricated by mask assisted ion beam etching on an epitaxial R-PZT film
Summary
There is a surge of research interest in exotic ferroelectric topological structures (e.g., vortices and skyrmion). The observation of stable center-type topological domains in isolated BiFeO3 (BFO) nanoislands enables the electric control of individual topological states,[13] and allows the non-destructive readout of different topological states via their corresponding domain wall conductive current levels.[22] These advances have created a new avenue for further design and implementation of these topological states in future topological electronic devices. We demonstrate a unique complex center-type topological domain (with a center-type topological structure for a lateral polarization component and a cylinder pattern in vertical components) in R-PZT nanoislands fabricated by a mask assisted ion beam etching method The observation of such complex center states might provide a good arena for further exploring their new physical phenomena and application potential
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