Abstract
Nonlinear vertical transport in semiconductor superlattices is investigated theoretically taking into account electron heating and layer width fluctuations. Due to electron heating the local current–field characteristic displays an S-shaped bistable part, in addition to the N-shaped regime induced by resonant tunneling at low fields. The layer width fluctuations can explain the experimentally observed jumps in the time-averaged current–voltage characteristic under high-frequency oscillations.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
