Complete optical isolation created by indirect interband photonic transitions

Abstract

Achieving on-chip optical signal isolation is a fundamental difficulty in integrated photonics1. The need to overcome this difficulty is becoming increasingly urgent, especially with the emergence of silicon nano-photonics2,3,4, which promises to create on-chip optical systems at an unprecedented scale of integration. Until now, there have been no techniques that provide complete on-chip signal isolation using materials or processes that are fundamentally compatible with silicon CMOS processes. Based on the effects of photonic transitions5,6, we show here that a linear, broadband and non-reciprocal isolation can be accomplished by spatial–temporal refractive index modulations that simultaneously impart frequency and wavevector shifts during the photonic transition process. We further show that a non-reciprocal effect can be accomplished in dynamically modulated micrometre-scale ring-resonator structures. This work demonstrates that on-chip isolation can be accomplished with dynamic photonic structures in standard material systems that are widely used for integrated optoelectronic applications. The realization of a chip-based, broadband optical isolator is of considerable interest for integrated photonics. To date, no technique has been shown to be able to do this using materials and processes that are CMOS-compatible. Now, scientists propose that the use of direction-dependent photonic mode transitions in silicon nanophotonic structures could be the solution.