Abstract
A comprehensive RF analysis technique based on ensemble Monte Carlo (EMC) simulation of compound FET's with realistic device geometry is presented. Y-parameters are obtained through Fourier transformation of the EMC transients in response to small changes in the terminal voltages. The terminal currents are statistically enhanced and filtered to allow for reliable y-parameters extraction. Improved analytic procedure for extracting the intrinsic device small-signal circuit components is described. As a result, stable y-parameters and reliable circuit components can he extracted for the whole range of device operation voltages. Parasitic components like contact and gate resistances are included in the y-parameters at a post processing stage to facilitate the forecast of the performance figures of merit of real devices. The developed RF technique has been applied in the EMC simulation of pseudomorphic HEMT's (pHEMT's) fabricated at the Glasgow Nanoelectronics Research Center. Good agreement has been achieved between the simulated and measured small-signal circuit components and performance figures of merit.
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