Abstract
A new method of electrical characterization of very thin insulating layers by performing static I– V a and dynamic C m- V a, G m- V a measurements is presented. The interface state density is obtained in the most part of the silicon gap using Al-SiO 2 (30 Å)-Si (n-type) tunnel structures. Additional measurements of metal-semiconductor barrier φ bn and of effective tunneling barrier φ m heights using the internal photoemission effect have also been performed. The values of these parameters have been introduced in a numerical self-consistent model of simulation of the I- V a characteristics of the studied devices. Excellent agreement between the numerical simulation and the experimental results has been obtained.
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