Abstract
This paper deals with a complete analytical modeling and analysis of thermoelectric uncooled infrared sensors compatible with CMOS technology. The operating principle involves a localized thermal assessment resulting from IR radiation absorption, a micromachined membrane on which PolySi/Al thermojunctions have been deposited causing an internal self-generated electromotive force. The model put forward is based on dividing the sensor into three zones, each one being the subject of a thorough thermal study (conduction, convection and radiation thermal effect). Through the analytical thermal gradient analysis developed in each zone of the structure (absorber, part of thermoelectric transducer layer placed under the absorber, thermoelectric transducer) we are able to predict the sensitivity, detectivity and the noise equivalent power to the sensor. Thus, such a kind of analytical approach is worth of interest to optimize thermopile sensor design parameters.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
