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Abstract
A new compound semiconductor complementary transistor technology is proposed and the constituent devices demonstrated in discrete form. The n-channel transistor exhibits a peak transconductance of 110 mS/mm, a drain current density of 240 mA/mm and a unity current gain frequency of 9.5 GHz for a nominal gate length of 1 μm. The p-channel transistor has a peak transconductance of 35 mS/mm and a drain current density of 65 mA/mm for an effective gate length of 1.1 μm. Compatibility of this technology with optical devices is shown by fabricating a laser from the same material. Threshold current densities as low as 950 A/cm2 and external efficiencies of 50% are obtained.
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