Abstract
The first complementary thin-film transistor (TFTs) and complementary inverter employing single-crystal Si (100) nanomembranes are demonstrated on a low-temperature flexible plastic substrate. Combined high-temperate and low-temperature processes are employed to enable the integration of both n-and p-channel TFTs (N-TFT and P-TFT) on the same piece of single-crystal Si nanomembrane and to enable the compatibility of the device fabrication with the low-temperature plastic substrate. Under a bias voltage (VDD) of 5 V, the inverters exhibit a gain of 5.88 and switching threshold voltage VM of 2.5 V. The high and low noise margins of the inverter are 2.05 V and 2 V, respectively. These demonstrations may eventually lead to low-power digital switching applications using transferable Si nanomembrane on flexible substrates.
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