Complementary switching in single Nb3O7(OH) nanowires

Carola Ebenhoch,Christina Scheu,Thomas Gänsler,Lukas Schmidt-Mende,Matthias Hagner,Stefan Schupp,Anna Frank

doi:10.1063/5.0052589

Abstract

Single nanowires and networks are considered as promising candidates for miniaturized memristive devices for brain-inspired systems. Moreover, single crystalline nanostructures are useful model systems to gain a deeper understanding in the involved switching mechanism of the investigated material. Here, we report on hydrothermally grown single crystalline Nb3O7(OH) nanowires showing a complementary resistive switching (CRS) behavior. The CRS characteristics can be related to an oxygen vacancy migration at the electrode/metal hydroxide interface. Therefore, an oxygen plasma treatment is used to reduce the oxygen vacancy content, resulting in a total reduction of the device conductivity. Furthermore, temporal resolved current–voltage measurements demonstrate the dependence of the destructive readout process of the resistance states on the voltage amplitude and polarity.

Highlights

It was shown by Snider in 20087 that using a complementary metal-oxide semiconductor (CMOS) combined with a memristive synapse in a crossbar array configuration, neuromorphic computing in a parallel, scalable, and failure-tolerance way is possible
As the memristive device function strongly depends on the material, its internal structure, defect concentration, and the device architecture,1,14 detailed analysis of the switching mechanism and neuromorphic behavior is necessary for each device separately
The growth of Nb3O7(OH) nanowires by a hydrothermal method results in single crystalline nanowires containing planar stacking faults. 3 μm long single Nb3O7(OH) nanowires are successfully contacted on top of two gold electrodes

Summary

Introduction

Memristive devices are promising candidates for realizing artificial neural networks due to their ability to emulate biological synaptic functions. Combined information storage and data processing is achieved by implementing memristive elements in a parallel approach into logic circuits. It was shown by Snider in 20087 that using a complementary metal-oxide semiconductor (CMOS) combined with a memristive synapse in a crossbar array configuration, neuromorphic computing in a parallel, scalable, and failure-tolerance way is possible. Combined information storage and data processing is achieved by implementing memristive elements in a parallel approach into logic circuits.. Combined information storage and data processing is achieved by implementing memristive elements in a parallel approach into logic circuits.4–6 It was shown by Snider in 20087 that using a complementary metal-oxide semiconductor (CMOS) combined with a memristive synapse in a crossbar array configuration, neuromorphic computing in a parallel, scalable, and failure-tolerance way is possible. To solve the sneak path problem in passive crossbar arrays, Linn et al. proposed the complementary resistive switching (CRS) by connecting two bipolar memristive elements. Additional energy for a write-back step after the readout is necessary to regain the memory state Approaches to overcome this problem are using unstable, volatile resistive switching devices in a CRS configuration, where the volatile resistive switch is used to readout the second cell.. To the best of our knowledge, this is the first report of Nb3O7(OH) single nanowires showing a memristive behavior

Methods

Results

Conclusion