Abstract
In order to utilize the spin field effect transistor in logic applications, the development of two types of complementary transistors, which play roles of the n- and p-type conventional charge transistors, is an essential prerequisite. In this research, we demonstrate complementary spin transistors consisting of two types of devices, namely parallel and antiparallel spin transistors using InAs based quantum well channels and exchange-biased ferromagnetic electrodes. In these spin transistors, the magnetization directions of the source and drain electrodes are parallel or antiparallel, respectively, depending on the exchange bias field direction. Using this scheme, we also realize a complementary logic operation purely with spin transistors controlled by the gate voltage, without any additional n- or p-channel transistor.
Highlights
In order to utilize the spin field effect transistor in logic applications, the development of two types of complementary transistors, which play roles of the n- and p-type conventional charge transistors, is an essential prerequisite
An n-metal oxide semiconductor (MOS) transistor consists of a p-type substrate with n-type source and drain electrodes, while a p-type MOS (p-MOS) transistor consists of an n-type substrate with p-type source and drain electrodes
The two transistors are operating in complementary mode, so the logic operation using these transistors is known as complementary MOS (CMOS) logic[1]
Summary
In order to utilize the spin field effect transistor in logic applications, the development of two types of complementary transistors, which play roles of the n- and p-type conventional charge transistors, is an essential prerequisite. We demonstrate complementary spin transistors consisting of two types of devices, namely parallel and antiparallel spin transistors using InAs based quantum well channels and exchange-biased ferromagnetic electrodes In these spin transistors, the magnetization directions of the source and drain electrodes are parallel or antiparallel, respectively, depending on the exchange bias field direction. The magnetization directions of the source and drain electrodes are parallel or antiparallel, respectively, depending on the exchange bias field direction Using this scheme, we realize a complementary logic operation purely with spin transistors controlled by the gate voltage, without any additional n- or p-channel transistor. In the classical Datta-Das spin-FET2,3 the spin orientation is controlled by applying an electric field The operation of this device has been experimentally demonstrated using a quantum well channel and ferromagnetic electrodes. While many types of spin logic devices have been reported, there has been no experimental demonstration of complementary operation due to the absence of two complementary devices such as an n-MOS and a p-MOS
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