Abstract
In this letter, the dynamic evolution of TiN/HfO2/Pt device from bipolar resistive switching (BRS) to complementary resistive switching (CRS) was reported. The device exhibits the uniform BRS with long retention, good endurance, and self-compliance characteristics after the asymmetric two-step electroforming. However, BRS of the device eventually transforms to CRS after the transitional processes through controlling the compliance current. Meanwhile, the effective barrier height rises up accordingly as the device evolves from BRS to CRS. These superior resistive switching performances of TiN/HfO2/Pt device here can be elucidated in views of evolution of asymmetric filament. This work confirms the intimate correlation and discrepancy between BRS and CRS, and also indicates the potential application of TiN/HfO2/Pt device for future ultra-dense resistive random access memory.
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