Abstract
This paper will provide an insight into significant advantage that can be gained from Memristor and Complementary Resistive Switch (CRS) constructs adopted for smart sensory search engines (S3E) and will address design issues pertaining to the novel characteristics offered by resistance-state switching. Essential attributes of the technology such as the switching mechanism in Metal-Insulator-Metal (MIM) constructs that underpin modeling principles will be reviewed in order to provide an insight into behavior of this new fundamental component. By the way of an example a high-performance nearest match search engine being implemented using a single CRS and four MOS transistors for Hamming distance search operation with significantly improved performance will be presented. An overview of modeling principles that would allow designers to venture into this new design domain, critical for realization of future smart sensors will also be briefly reviewed.
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