Abstract

In article number 2101434, Ming Li and co-workers propose a CMOS-compatible Light-stimulated Porphyrin-coated Silicon Nanowire Field Effect Transistor (LPSNFET) to form the complementary photo-synapses with only two CMOS-like transistors. LPSNFET exhibits five-fold improvement in photo sensitivity compared to the bare silicon nanowire devices. Complementarily behaviors can be realized by modulating SiNW/porphyrin interface, and the CMOS compatibility provides a potential application in future large scale in-sensor computing.

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